tip32/tip32a/tip32b/TIP32C ? pn p epitaxial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com tip32/tip32a/tip32b/TIP32C rev. a 1 july 2008 tip32/tip32a/tip32b/TIP32C pnp epitaxial silicon transistor features ? complementary to tip31/tip31a/tip31b/tip31c absolute maximum ratings t c =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage : tip32 : tip32a : tip32b : TIP32C - 40 - 60 - 80 - 100 v v v v v ceo collector-emitter voltage : tip32 : tip32a : tip32b : TIP32C - 40 - 60 - 80 -100 v v v v v ebo emitter-base voltage - 5 v i c collector current (dc) - 3 a i cp collector cu rrent (pulse) - 5 a i b base current - 3 a p c collector dissipation (t c =25 c) 40 w collector dissipation (t a =25 c) 2 w t j junction temperature 150 c t stg storage temperature - 65 ~ 150 c 1. base 2. collector 3. emitter
tip32/tip32a/tip32b/TIP32C ? pn p epitaxial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com tip32/tip32a/tip32b/TIP32C rev. a 2 electrical characteristics t c =25 c unless otherwise noted * pulse test: pw 300ms, duty cycle 2% symbol parameter test condition min. max. units v ceo (sus) * collector-emitter sustaining voltage : tip32 : tip32a : tip32b : TIP32C i c = - 30ma, i b = 0 -40 -60 -80 -100 v v v v i ceo collector cu t-off current : tip32/32a : tip32b/32c v ce = - 30v, i b = 0 v ce = - 60v, i b = 0 - 0.3 - 0.3 ma ma i ces collector cu t-off current : tip32 : tip32a : tip32b : TIP32C v ce = - 40v, v eb = 0 v ce = - 60v, v eb = 0 v ce = - 80v, v eb = 0 v ce = - 100v, v ce = 0 - 200 - 200 - 200 - 200 a a a a i ebo emitter cut-off current v eb = - 5v, i c = 0 - 1 ma h fe * dc current gain v ce = - 4v, i c = - 1a v ce = - 4v, i c = - 3a 25 10 50 v ce (sat) * collector-emitter saturation voltage i c = - 3a, i b = - 375ma - 1.2 v v be (sat) * base-emitter saturation voltage v ce = - 4v, i c = - 3a - 1.8 v f t current gain bandwidth product v ce = - 10v, i c = - 500ma, f = 1mhz 3.0 mhz
tip32/tip32a/tip32b/TIP32C ? pn p epitaxial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com tip32/tip32a/tip32b/TIP32C rev. a 3 typical characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. safe operating area figure 4. power derating 1 10 100 1000 10000 1 10 100 1000 v ce = 4v h fe , dc current gain i c [ma], collector current 1 10 100 1000 10000 10 100 1000 10000 i c /i b = 10 v ce (sat) v be (sat) v be (sat), v ce (sat)[mv], saturation voltage i c [ma], collector current 10 100 0.1 1 10 100 s tip31c v ceo max. tip31b v ceo max. tip31a v ceo max. tip31 v ceo max. i c (max) (dc) i c (max) (pulse) 5 m s 1 m s i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 200 0 5 10 15 20 25 30 35 40 45 50 p c [w], power dissipation t c [ o c], case temperature
tip32/tip32a/tip32b/TIP32C ? pn p epitaxial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com tip32/tip32a/tip32b/TIP32C rev. a 4 mechanical dimensions to220
tip32/tip32a/tip32b/TIP32C pn p epitaxial silicon transistor tip32/tip32a/tip32b/TIP32C ? 2008 fairchild semiconductor corporation www.fairchildsemi.com tip32/tip32a/tip32b/TIP32C rev. a 5
|
